标题:Forward current conduction mechanism of mechanically exfoliated β-Ga2O3/GaN PN heterojunction diode
作者:Feng Q.; Yan G.; Hu Z.; Feng Z.; Tian X.; Jiao D.; Mu W.; Jia Z.;等 更多
作者机构:[Feng, Q] State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, Chi 更多
通讯作者地址:[Yan, G] State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian UniversityChina
来源:ECS Journal of Solid State Science and Technology
出版年:2020
卷:9
期:3
DOI:10.1149/2162-8777/ab754e/pdf
摘要:In this letter, we fabricated the mechanically exfoliated β-Ga2O3/GaN pn heterojunction diode and carried out the electrical characteristics measurements. At room temperature, the diode shows a good rectifying property, with a turn-on voltage of 3.9 V–4.6 V and rectifying ratio greater than 106 @ ±20 V. From the 1/C2 vs V plot, the built-in voltage is determined to be 3.4 V and the energy band diagram of the heterojunction is also constructed. According to the temperature dependent I-V cures, three different forward current conduction mechanism can be identified, recombination-tunneling mechanism, trap charge limited space-charge-limited-current(SCLC) and SCLC mechanism for I < 10–7 A (region I), 10–7 < I < 10–4 A (region II) and I > 10–4 A (region III), respectively. While in region II, two different Et from exponential trap distribution model is determined to be 0.514 eV, 0.310 eV and the corresponding trap density is 1.63 × 1016 cm–3 and 1.71 × 1016 cm–3, respectively. © 2020 The Electrochemical Society (“ECS”).
收录类别:SCOPUS
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081724817&doi=10.1149%2f2162-8777%2fab754e%2fpdf&partnerID=40&md5=325c80b48cb6a8cae3b03e2743641b35
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