标题:Controlling the Electronic Structures and Properties of in-Plane Transition-Metal Dichalcogenides Quantum Wells
作者:Wei, Wei; Dai, Ying; Niu, Chengwang; Huang, Baibiao
作者机构:[Wei, Wei; Dai, Ying; Huang, Baibiao] Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China.; [Niu, Chengwang] Forschung 更多
通讯作者:Dai, Y
通讯作者地址:[Dai, Y]Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China.
来源:SCIENTIFIC REPORTS
出版年:2015
卷:5
DOI:10.1038/srep17578
摘要:In-plane transition-metal dichalcogenides (TMDs) quantum wells have been studied on the basis of first-principles density functional calculations to reveal how to control the electronic structures and the properties. In collection of quantum confinement, strain and intrinsic electric field, TMD quantum wells offer a diverse of exciting new physics. The band gap can be continuously reduced ascribed to the potential drop over the embedded TMD and the strain substantially affects the band gap nature. The true type-II alignment forms due to the coherent lattice and strong interface coupling suggesting the effective separation and collection of excitons. Interestingly, two-dimensional quantum wells of in-plane TMD can enrich the photoluminescence properties of TMD materials. The intrinsic electric polarization enhances the spin-orbital coupling and demonstrates the possibility to achieve topological insulator state and valleytronics in TMD quantum wells. In-plane TMD quantum wells have opened up new possibilities of applications in next-generation devices at nanoscale.
收录类别:SCOPUS;SCIE
WOS核心被引频次:8
Scopus被引频次:6
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84948696896&doi=10.1038%2fsrep17578&partnerID=40&md5=56b3eab466c5c93cf4dcb167695b8f09
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