标题:PREPARATION AND FERROELECTRIC PROPERTIES OF LEAD-FREE A(0.5)Bi(0.5)TiO(3) (A = Na OR K) THIN FILMS
作者:Ding, Y. L.; Zhang, X. H.; Yang, C. H.; Zhang, X. Y.; Yang, H. L.
作者机构:[Yang, H. L.] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China.; [Ding, Y. L.; Yang, C. H.; Zhang, X. Y.] Univ Jinan, Sch Mat S 更多
通讯作者:Yang, H.L.
通讯作者地址:[Yang, HL]Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China.
来源:SURFACE REVIEW AND LETTERS
出版年:2011
卷:18
期:3-4
页码:121-125
DOI:10.1142/S0218625X11014552
关键词:Ferroelectrics; thin films; atomic force microscopy; electrical; properties
摘要:Both ferroelectric Na0.5Bi0.5TiO3 (NBT) and K0.5Bi0.5TiO3 (KBT) are considered as the best known lead-free materials. In this experiment, we prepared NBT and KBT thin films on Pt/TiO2/SiO2/Si substrates by metalorganic solution deposition. The structural properties and surface morphologies were measured using X-ray diffraction and atomic force microscopy. The NBT and KBT films show higher leakage currents due to the oxygen vacancies in the films. The remanent polarization and coercive field of NBT (KBT) thin film are 9 (5.2) mu C/cm(2) and 50 (25) kV/cm at an applied electric field of 150 kV/cm. The relative dielectric constants of NBT and KBT are 340 and 316 at 1 MHz, respectively.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:4
Scopus被引频次:4
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-83755177989&doi=10.1142%2fS0218625X11014552&partnerID=40&md5=665e81c9c5c36d3a67e13bf689b1f8e7
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