标题:Observation of intrinsic dark exciton in Janus-MoSSe heterosturcture induced by intrinsic electric field
作者:Long, Chen; Gong, Zhi-Rui; Jin, Hao; Dai, Ying
作者机构:[Long, Chen; Dai, Ying] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.; [Gong, Zhi-Rui; Jin, Hao] Shen 更多
通讯作者:Jin, H
通讯作者地址:[Jin, H]Shenzhen Univ, Coll Phys & Energy, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China.
来源:JOURNAL OF PHYSICS-CONDENSED MATTER
出版年:2018
卷:30
期:39
DOI:10.1088/1361-648X/aadc32
关键词:transition metal dichalcoginides; exciton; heterostructure
摘要:The nature of exciton in heterostructure exhibits distinct properties, which makes heterostructure a promising candidate for valleytronic and optoelectronic applications. Therefore, understanding of exciton behaviour in heterostructure is the key approach to design novel devices. Here, we investigate the electronic properties including quasiparticle-energy calculations (on the level of the GW approximation) and optical properties (on the level of the Bethe-Salpeter equation) of Janus-MoSSe based heterostructure. Our results show that the build-in electric field caused by spontaneous polarization of Janus-MoSSe monolayer can significantly affect the interlayer interactions within the heterostructure, giving rise to a brightto-dark exciton transition. To shed light on this phenomenon, a theoretical model is developed, which illustrates that the dark exciton can be ascribed to a coherence cancellation at the band edge positions induced by the strong interlayer coupling. Our findings may provide a new way for modulating and developing of van der Waals heterostructure that have applications in valleytronic and optoelectronic devices.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85053391156&doi=10.1088%2f1361-648X%2faadc32&partnerID=40&md5=417a37be3b04098d42a0c592e4be39dd
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