标题:Design of high-disturbance driver system for SiC high-power module
作者:Zhu, Liangtao; Wang, Tao; Song, Jinqiu; Li, Bin; Zhang, Jianguo
通讯作者:Zhu, LT
作者机构:[Zhu, Liangtao; Li, Bin; Zhang, Jianguo] Qingdao MKL Technol Corp, Qingdao, Peoples R China.; [Wang, Tao; Song, Jinqiu] Shandong Univ, Sch Control S 更多
会议名称:5th International-Federation-of-Automatic-Control (IFAC) Conference on Engine and Powertrain Control, Simulation and Modeling (E-COSM)
会议日期:SEP 20-22, 2018
来源:IFAC PAPERSONLINE
出版年:2018
卷:51
期:31
页码:690-693
DOI:10.1016/j.ifacol.2018.10.159
关键词:MOSFET; SiC Power module; Anti-interference; Driver system
摘要:Compared to conventional Si power electronic device, the advantages of SiC power electronic device are high turn-off voltage, low on-resistance, high switching frequency and high efficiency. The high performance of the device is achieved by shortening the turn-on and turn-off times. However, the SiC power modules have higher dv/dt and di/dt, which leads to more CM (common mode) interference and DM (differential mode) interference certainly. In this paper, the operation principle of driver circuit is introduced firstly. Then, the high disturbance driver system is verified by the SiC battery test and simulation equipment which is researched independently. In addition, an anti-interference driver circuit and driver line based on the actual engineering requirements are designed to decrease the CM interference and DM interference. Finally, the high anti-interference driver system for SiC power modules was verified by experiment. (C) 2018, IFAC (International Federation of Automatic Control) Hosting by Elsevier Ltd. All rights reserved.
收录类别:CPCI-S;EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056184142&doi=10.1016%2fj.ifacol.2018.10.159&partnerID=40&md5=1626a4e3e18a0aa6b06d794921223fc2
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