标题:Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells
作者:吕海燕;吕元杰;王强;李建飞;冯志红;徐现刚;冀子武;
作者机构:[吕海燕;吕元杰;王强;李建飞;冯志红;徐现刚;冀子武]School of Physics,Shandong University;[吕海燕;吕元杰;王强;李建飞;冯志红;徐现刚;冀子武]National Key Lab 更多
来源:Chinese Optics Letters
出版年:2016
期:04
页码:77-81
关键词:InGaN;Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells;QDs;
摘要:Temperature-dependent photoluminescence(PL) of phase-separated InGaN quantum wells is investigated over a broader excitation power range. With increasing excitation power from 0.5 ^xW to 50 mW, the In-rich quasi-quantum dot(QD)-related PL peak disappears at about 3 mW, while temperature behavior of ...
资源类型:期刊论文
原文链接:http://kns.cnki.net/kns/detail/detail.aspx?FileName=GXKB201604017&DbName=CJFQ2016
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