标题:Preparation and characterization of Mg-doped GaN nanowires by Au-catalyzed magnetron sputtering deposition
作者:Liang, Ru Guo ;Liang, Rui ;Cao, Gang ;Shi, Feng
通讯作者:Shi, Feng
作者机构:[Liang, Ru Guo ] Engineering Training Center, Shandong University, Jinan; 250002, China;[Cao, Gang ] School of Management Science and Engineering, Sha 更多
会议名称:2014 - China Functional Material Technology and Industry Forum, CFMTIF 2014
会议日期:26 August 2014 through 28 August 2014
来源:Materials Science Forum
出版年:2015
卷:809-810
页码:190-200
DOI:10.4028/www.scientific.net/MSF.809-810.193
关键词:Catalyst; Growth mechanism; Magnetron sputtering deposition; Mg-doped GaN nanowires; Optical property
摘要:Mg-doped GaN nanowires have been successfully synthesized on Si (111) substrates by magnetron sputtering deposition through ammoniating Ga2O3/Au thin films at 900 ℃ for 15 min. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum were carried out to characterize microstructure, morphology, and optical property of GaN sample. The results demonstrate that the nanowires are single-crystal Mg-doped GaN with hexagonal wurtzite structure and high crystalline quality, which have the size of 40 nm in diameter and several tens of microns in length and good emission property. The growth procedure mainly follows the VLS mechanism, and Au plays an important role as catalyst, and more defect energy is formed due to metallic Au and thus promote the growth of GaN nanowires. © (2015) Trans Tech Publications, Switzerland.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84922210251&doi=10.4028%2fwww.scientific.net%2fMSF.809-810.193&partnerID=40&md5=0cc87e37d2af6015e0ce1c04fe0e5c61
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