标题:Intriguing electronic properties of two-dimensional MoS2/TM2CO2(TM = Ti, Zr, or Hf) hetero-bilayers: Type-II semiconductors with tunable band gaps
作者:Li, Xinru ;Dai, Ying ;Ma, Yandong ;Liu, Qunqun ;Huang, Baibiao
作者机构:[Li, Xinru ;Dai, Ying ;Ma, Yandong ;Liu, Qunqun ;Huang, Baibiao ] School of Physics, State Key Laboratory of Crystal Materials, Shandong University, J 更多
来源:Nanotechnology
出版年:2015
卷:26
期:13
DOI:10.1088/0957-4484/26/13/135703
摘要:Two-dimensional (2D) transition metal compound (TMC) monolayers, as well as their van der Waals heterostructures with unique properties, are fundamentally and technologically intriguing. Here, heterostructures consisting of a MoS2 monolayer and TM2CO2(TM = Ti, Zr or Hf) monolayers are systematically researched by means of the density functional theory (DFT). Different from semiconductor/metal contacts, MoS2and TM2CO2monolayers are all semiconductors with band gaps ranging from 0.25-1.67 eV. According to rigorous screening of stacking patterns, MoS2/Zr2CO2is shown to be an indirect type-II semiconductor with the maximum valence and minimum conduction bands spatially separated on opposite monolayers. Simultaneously, the interface charges transfer from Zr2CO2to MoS2results in a built-in field that separates the electrons and holes efficiently. Also, the smaller effective masses of electrons and the holes of band edges indicate the higher carrier mobility. Moreover, strain regulation can make the hetero-bilayer's character a semiconductor-semimetal-metal transition. The physical insights pave the way for the good performance of MoS2/TM2CO2in next-generation electronic devices and photocatalysts.
© 2015 IOP Publishing Ltd.
收录类别:EI
资源类型:期刊论文
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