标题:Schottky Barrier Rectifier Based on (100) beta-Ga2O3 and its DC and AC Characteristics
作者:He, Qiming; Mu, Wenxiang; Fu, Bo; Jia, Zhitai; Long, Shibing; Yu, Zhaoan; Yao, Zhihong; Wang, Wei; Dong, Hang; Qin, Yuan; Jian, Gu 更多
作者机构:[He, Qiming; Tang, Minghua] Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Key Film Mat & Applicat Equipments Hunan, Xiangtan 411105, Peoples R China.; 更多
通讯作者:Liu, Ming
通讯作者地址:[Liu, M]Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrat Technol, Beijing 100029, Peoples R China.
来源:IEEE ELECTRON DEVICE LETTERS
出版年:2018
卷:39
期:4
页码:556-559
DOI:10.1109/LED.2018.2810858
关键词:(100) beta-Ga2O3; Schottky barrier rectifier; rectification; characteristics
摘要:ASchottky barrier rectifierwas fabricatedwith a (100)- oriented beta-Ga2O3 substrate grown by the edge-defined film-fed method. The Sn- doped beta-Ga2O3 substrate had an effective donor concentration of approximately 2 x 10(17) cm(-3). High performance parameterswere obtained, such as a high forward current (421 A/cm(2) at 2 V), low ON-resistance (2.9 m Omega.cm(2)), and short reverse recovery time (20 ns). Furthermore, the dynamic behavior of the device is characterized through test on the half-wave rectification of ac voltages at different frequency. The diode worked well at 100 kHz. At the end of the letter, we discuss how Ga2O3 Schottky rectifier can operate at high frequency.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:2
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042875204&doi=10.1109%2fLED.2018.2810858&partnerID=40&md5=7ca9b7b14d553f906f136337d8934320
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