标题:Orthogonal analysis for perovskite structure microwave dielectric ceramic thin films fabricated by the RF magnetron-sputtering method
作者:Cui Chuanwen; Shi Feng; Li Yuguo; Wang Shuyun
作者机构:[Cui Chuanwen; Shi Feng; Li Yuguo; Wang Shuyun] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Shandong, Peoples R China.; [Cui Chuanwen; Sh 更多
通讯作者:Feng, S
通讯作者地址:[Shi, F]Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Shandong, Peoples R China.
来源:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版年:2010
卷:21
期:4
页码:349-354
DOI:10.1007/s10854-009-9919-y
摘要:The perovskite structure microwave dielectric ceramic thin films have been deposited by radio frequency (RF) magnetron sputtering on SiO(2)(110) substrates. Subsequently, orthogonal analysis has been adopted to optimize the process parameters. The experimental results indicate that sputtering pressure has the greatest impact on comprehensive evaluation indicators such as the film quality, whereas sputtering power has a lower effect; the ratio of O(2)/Ar and substrate temperature have the least impact on the process. Thus, the optimal process parameters to prepare perovskite structure dielectric thin films by RF magnetron sputtering are as follows: 200 W of sputtering power, 0.25 Pa of sputtering pressure, Ar as working gas, and substrate temperature of 610 A degrees C.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:34
Scopus被引频次:45
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-77950369762&doi=10.1007%2fs10854-009-9919-y&partnerID=40&md5=0bd610ebec443fbac8f20db31daf9859
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