标题:Electrical properties of ferroelectric Bi4Ti3O12 thin films by APMOCVD
作者:Wang, H; Shen, XN; Su, XJ; Wang, Z; Shang, SX; Wang, M
通讯作者:Wang, H
作者机构:[Wang, H; Shen, XN; Su, XJ; Wang, Z; Shang, SX; Wang, M]NANJING UNIV,SOLID STATE MICROSTRUCT LAB,NANJING 210008,PEOPLES R CHINA.
会议名称:1st Asian Meeting on Ferroelectrics (AMF01) / 2nd East Asia Conf on Chemical Sensors (EACCS-2) / Int Conf on Electronic Components and Materials / Int Conf on Sensors and Actuators (ICECM-ICSA 95)
会议日期:OCT 05-08, 1995
来源:FERROELECTRICS
出版年:1997
卷:195
期:1-4
页码:233-236
DOI:10.1080/00150199708260528
摘要:Bi4Ti3O12 this films with (001) preferred orientation were prepared on Si (100) Substrate by APMOCVD and RTA. The dielectric constant is 138 at room temperature, the Curie temperature is about 680 degrees C. The room temperature resistivities were in the range 10(10)-10(13)Ohm.cm. At low field the film exhibits Ohmic behavior and at high field the space-charge-limited-current conduction is the dominant charge transport mechanism.
收录类别:CPCI-S;SCOPUS;SCIE
WOS核心被引频次:12
Scopus被引频次:11
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031382993&doi=10.1080%2f00150199708260528&partnerID=40&md5=d9ae2fdf4257cdfcb070a94d4bae837c
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