标题:Enhancement of the point defect pinning effect in Mo-doped Bi2212 single crystals of reduced anisotropy
作者:S H Han;C H Cheng;Y Dai
通讯作者:Han, S.H.
作者机构:[Han, S.H] School of Physics and Electronics, State Key Laboratory of Crystal, Shandong University, Shandong 250100, China;[ Cheng, C.H] Sch. of Mat. 更多
会议名称:Symposium on Superconducting Materials for Electronic Applications
会议日期:JUN 10-14, 2002
来源:Superconductor Science & Technology
出版年:2002
卷:15
期:12
页码:1725-1727
DOI:10.1088/0953-2048/15/12/319
摘要:High quality Bi_2Sr_2CaCu_(2-x)Mo_xO_y (x = 0, 0.01 and 0.02) single crystals have been grown by a self-flux method in a horizontal temperature gradient and their flux pinning and irreversibility behaviour have been investigated. The irreversibility lines of the undoped and Mo-doped Bi2212 crystals have been greatly improved by reducing the anisotropy parameter gamma. However, this improvement is much more pronounced for Mo-doped crystals than for the undoped ones. The peak effect of magnetization loops also changes with both Mo-doping and gamma. The results provide strong evidence that the point defect pinning served by Mo is greatly enhanced when the anisotropy of the system is reduced.
收录类别:CPCI-S;EI;SCOPUS;SCIE
WOS核心被引频次:6
Scopus被引频次:6
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036929072&doi=10.1088%2f0953-2048%2f15%2f12%2f319&partnerID=40&md5=741f3572585127bd503cea9b640258f2
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