标题：Enhancement of the point defect pinning effect in Mo-doped Bi2212 single crystals of reduced anisotropy
作者：S H Han;C H Cheng;Y Dai
作者机构：[Han, S.H] School of Physics and Electronics, State Key Laboratory of Crystal, Shandong University, Shandong 250100, China;[ Cheng, C.H] Sch. of Mat. 更多
会议名称：Symposium on Superconducting Materials for Electronic Applications
会议日期：JUN 10-14, 2002
来源：Superconductor Science & Technology
摘要：High quality Bi_2Sr_2CaCu_(2-x)Mo_xO_y (x = 0, 0.01 and 0.02) single crystals have been grown by a self-flux method in a horizontal temperature gradient and their flux pinning and irreversibility behaviour have been investigated. The irreversibility lines of the undoped and Mo-doped Bi2212 crystals have been greatly improved by reducing the anisotropy parameter gamma. However, this improvement is much more pronounced for Mo-doped crystals than for the undoped ones. The peak effect of magnetization loops also changes with both Mo-doping and gamma. The results provide strong evidence that the point defect pinning served by Mo is greatly enhanced when the anisotropy of the system is reduced.