标题:Novel TiO2 center dot WO3 varistor system
作者:Su, WB; Wang, JF; Chen, HC; Wang, WX; Zang, GZ; Li, CP
通讯作者:Su, WB
作者机构:[Su, WB; Wang, JF; Chen, HC; Wang, WX; Zang, GZ; Li, CP]Shandong Univ, Sch Phys & Microelect, Natl Key Lab Crystal Mat, Jinan 250100, People 更多
会议名称:8th International-Union-of-Materials-Research-Societies Conference on Electronic Materials
会议日期:JUN 10-14, 2002
来源:MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
出版年:2003
卷:99
期:1-3
页码:461-464
DOI:10.1016/S0921-5107(02)00473-7
关键词:Schottky barrier; titania varistor; tungsten oxide; electrical; nonlinearity
摘要:The nonlinear electrical behavior and dielectric properties of TiO2-based ceramics with various WO3 contents have been investigated. It was found that the 0.25% WO3 + 99.75% TiO2 has an optimal nonlinear coefficient alpha of 9.6, a breakdown electrical field of 44.5 V mm(-1), and an ultrahigh relative dielectric constant of 7.41 x 10(4) (measured at 1 kHz). The theory of defects in the crystal lattice was introduced to explain the nonlinear electrical behavior of the TiO2 (.) WO3 system. A grain boundary barrier model that is analogous to the grain boundary defect model for ZnO varistors are introduced in the article. From this point, the nonlinear electrical behavior of the TiO2 system is explained. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别:CPCI-S;EI;SCIE
WOS核心被引频次:23
资源类型:会议论文
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