标题:High-temperature Dirac half-metal PdCl3: a promising candidate for realizing quantum anomalous Hall effect
作者:Wang, Ya-ping; Li, Sheng-shi; Zhang, Chang-wen; Zhang, Shu-feng; Ji, Wei-xiao; Li, Ping; Wang, Pei-ji
作者机构:[Wang, Ya-ping; Li, Sheng-shi; Zhang, Chang-wen; Zhang, Shu-feng; Ji, Wei-xiao; Li, Ping; Wang, Pei-ji] Univ Jinan, Sch Phys & Technol, Jinan 250022, 更多
通讯作者:Zhang, SF
通讯作者地址:[Zhang, SF]Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China.
来源:JOURNAL OF MATERIALS CHEMISTRY C
出版年:2018
卷:6
期:38
页码:10284-10291
DOI:10.1039/c8tc02500b
摘要:The prospect of a Dirac half-metal (DHM) and the realization of the quantum anomalous Hall effect (QAHE) on a honeycomb lattice without external fields are a great challenge in experiments due to the structural complexities of two-dimensional (2D) crystals. Here, based on density-functional theory calculations, we propose an ideal candidate material for realizing these exotic quantum states in a 2D honeycomb metal-halogen lattice, single-layer PdCl3. We find that the ground state of PdCl3 is a 100% spin-polarized DHM with a ferromagnetic Curie temperature T-C = 528 K predicted from Monte Carlo simulations. Upon including spin-orbit coupling (SOC), PdCl3 reveals the QAHE due to the splitting of the manifold of Pd vertical bar d(xz)> and vertical bar d(yz)> bands near the Fermi level, which is characterized by the nontrivial Chern number (C = -1) and chiral edge states. In particular, the origin of the topological properties of the PdCl3 honeycomb lattice is explained by the tight-binding model. The sensitivity of nontrivial topology to the cooperative effect of the electron correlation of Pd-4d electrons and SOC is demonstrated: when increasing the on-site Coulomb repulsion U, a sizable nontrivial band gap E-g = 68.6 meV is obtained. Additionally, we explore the mechanical and dynamical stability, as well as strain response of PdCl3 for possible epitaxial growth conditions in experiments. The coexistence of a high temperature DHM and the QAHE in PdCl3 presents a promising platform for the emerging area of spintronics devices with dissipationless edge states.
收录类别:SCOPUS;SCIE
WOS核心被引频次:2
Scopus被引频次:3
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85054544121&doi=10.1039%2fc8tc02500b&partnerID=40&md5=0c21809ee99ab1b3ca73c38f8ff5f9ff
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