标题:A Comparative Study of the Morphologies of Etch Pits in Semi-insulating Silicon Carbide Single Crystals
作者:Peng, Yan; Xua, Xiangang; Hu, Xiaobo; Chen, Xiufang; Gao, Yuqiang
通讯作者:Peng, Y
作者机构:[Peng, Yan; Xua, Xiangang; Hu, Xiaobo; Chen, Xiufang; Gao, Yuqiang] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
会议名称:8th European Conference on Silicon Carbide and Related Materials
会议日期:AUG 29-SEP 02, 2010
来源:SILICON CARBIDE AND RELATED MATERIALS 2010
出版年:2011
卷:679-680
页码:145-152
DOI:10.4028/www.scientific.net/MSF.679-680.145
关键词:semi-insulating SiC wafer; etching morphology; contactless resistivity; mapping
摘要:Contact less resistivity mapping, scanning electron microscope (SEM) and confocal laser microscope have been used to study the relationship of the resistivity and the etching behavior of the semi-insulating 6H-SiC wafer. Evidence is presented that the morphologies of the etch pits vary significantly with the impurity concentrations. The V impurity strongly affects the etch rates of edge, screw and mixed dislocations. For the dislocation containing the Burgers vector component of < 0001 >, its vertical etch rate is enhanced distinctly. In contrast, the horizontal etch rate becomes larger for the dislocation containing the Burgers vector component of < 11(2)over bar0 >. The shape of the etch pits reflects the Fermi level of the semi-insulating wafer and the net shallow impurity concentration.
收录类别:CPCI-S;EI;SCOPUS
WOS核心被引频次:1
Scopus被引频次:1
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-79955125847&doi=10.4028%2fwww.scientific.net%2fMSF.679-680.145&partnerID=40&md5=c391fe63d5edac71f82bba4a9776cb92
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