标题：IN-SITU MEASUREMENT OF GROWTH-RATE BY LASER DIFFRACTION DURING CDTE SINGLE-CRYSTAL GROWTH FROM THE VAPOR-PHASE
作者：YANG, BL; ISSHIKI, M; ZHANG, CP; HUANG, XM; YU, XL
作者机构：[YANG, BL; ISSHIKI, M; ZHANG, CP; HUANG, XM; YU, XL]CHINESE ACAD SCI,CHANGCHUN INST PHYS,CHANGCHUN 130021,PEOPLES R CHINA.;[YANG, BL; ISSHIK 更多
通讯作者地址：[YANG, BL]TOHOKU UNIV,INST ADV MAT PROC,SENDAI,MIYAGI 980,JAPAN.
来源：JOURNAL OF CRYSTAL GROWTH
摘要：The feasibility of a far-field single-slit laser diffraction technique for in-situ growth rate measurements in physical vapour transport was demonstrated with CdTe single crystals. With a special crystal growth ampoule and a furnace with high optical quality windows, a resolution of better than 1 mu m was achieved. It was found that the growth rate of CdTe decreases significantly with growth time. In addition, the dependence of the growth rate on supersaturation (Delta T) was investigated.