标题:IN-SITU MEASUREMENT OF GROWTH-RATE BY LASER DIFFRACTION DURING CDTE SINGLE-CRYSTAL GROWTH FROM THE VAPOR-PHASE
作者:YANG, BL; ISSHIKI, M; ZHANG, CP; HUANG, XM; YU, XL
作者机构:[YANG, BL; ISSHIKI, M; ZHANG, CP; HUANG, XM; YU, XL]CHINESE ACAD SCI,CHANGCHUN INST PHYS,CHANGCHUN 130021,PEOPLES R CHINA.;[YANG, BL; ISSHIK 更多
通讯作者:YANG, BL
通讯作者地址:[YANG, BL]TOHOKU UNIV,INST ADV MAT PROC,SENDAI,MIYAGI 980,JAPAN.
来源:JOURNAL OF CRYSTAL GROWTH
出版年:1995
卷:147
期:3-4
页码:399-402
DOI:10.1016/0022-0248(94)00734-9
摘要:The feasibility of a far-field single-slit laser diffraction technique for in-situ growth rate measurements in physical vapour transport was demonstrated with CdTe single crystals. With a special crystal growth ampoule and a furnace with high optical quality windows, a resolution of better than 1 mu m was achieved. It was found that the growth rate of CdTe decreases significantly with growth time. In addition, the dependence of the growth rate on supersaturation (Delta T) was investigated.
收录类别:SCIE
WOS核心被引频次:1
资源类型:期刊论文
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