标题:A unipolar nano-diode detector with improved performance using the high-k material SiN x
作者:Zhang, Linqing ;Zhou, Haiping ;Zhang, Jiawei ;Wang, Qingpu ;Zhang, Yifei ;Song, Aimin
作者机构:[Zhang, Linqing ;Zhang, Jiawei ;Song, Aimin ] School of Electrical and Electronic Engineering, University of Manchester, Manchester, United Kingdom;[W 更多
通讯作者:Zhang, Yifei
来源:Semiconductor Science and Technology
出版年:2018
卷:33
期:11
DOI:10.1088/1361-6641/aae2f5
摘要:The performance of a solid-state planar nano-diode, namely self-switching diode (SSD), is improved by depositing a 100 nm-thick SiN x film with high dielectric constant (high-k) into the insulating nano-trenches. The SiN x film grown by using plasma-enhanced chemical vapour deposition can enhance the electric field coupling over the trenches and thus increase the accumulated charges for field effect. In this case, the current-voltage nonlinearity is improved significantly and the responsivity of high-frequency rectification is also increased by a factor of almost one order up to 100 GHz. In addition, compared to the device without SiN x coating, the low frequency noise of the proposed diode is suppressed dramatically. The improved responsivity and noise-equivalent power of 11 SSDs in parallel with SiN x coating are 110 V W-1 at 50 GHz and 180 pW Hz-1/2, which are comparable to the state-of-the-art data of reported SSD arrays.
© 2018 IOP Publishing Ltd.
收录类别:EI
资源类型:期刊论文
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