标题：Raman scattering study on phonon anisotropic properties of SiC
作者：Qin, Xiao; Li, Xiaomeng; Chen, Xiufang; Yang, Xianglong; Zhang, Fusheng; Xu, Xiangang; Hu, Xiaobo; Peng, Yan; Yu, Peng
作者机构：[Qin, Xiao; Li, Xiaomeng; Chen, Xiufang; Yang, Xianglong; Zhang, Fusheng; Xu, Xiangang; Hu, Xiaobo; Peng, Yan] Shandong Univ, State Key Lab Crystal Ma 更多
通讯作者：Chen, Xiufang;Chen, XF;Xu, XG
通讯作者地址：[Chen, XF; Xu, XG]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.
来源：JOURNAL OF ALLOYS AND COMPOUNDS
关键词：SiC; Phonon; Anisotropic; Raman selection rules
摘要：Phonon anisotropic properties of 4H, 6H and 15R-SiC were investigated by polarization Raman scattering, and Raman selection rules were explored both theoretically and experimentally. As a function of the relative angles between the incident and the scattered light, Raman intensity of E-1, E-2 and A(1) modes were collected from the (0001) plane, the (1 (1) over bar 00) plane, and the (11 (2) over bar0) plane of wurtzite SiC and the 15R-SiC region in the (0001) plane. Results showed that E-l, E-2 and A(l) modes were anisotropic in the (11 (2) over bar0) and the (1 (1) over bar 00) planes of 4H and 6H-SiC, while E-2 modes were isotropous in the (0001) plane. Furthermore, E-1 mode of 799 cm(-1) in the (0001) plane appeared and exhibited anisotropic properties due to the stacking faults in SiC. Otherwise, the anisotropic properties of A l and E modes of 15R-SiC in the (0001) plane were in agreement with that of wurtzite SiC. (C) 2018 Elsevier B.V. All rights reserved.