标题:Intrinsic multiferroicity in two- dimensional VOCl2 monolayers
作者:Ai, Haoqiang; Song, Xiaohan; Qi, Siyun; Li, Weifeng; Zhao, Mingwen
作者机构:[Zhao, Mingwen] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.; Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, 更多
通讯作者:Zhao, Mingwen;Zhao, MW
通讯作者地址:[Zhao, MW]Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.
来源:NANOSCALE
出版年:2019
卷:11
期:3
页码:1103-1110
DOI:10.1039/c8nr08270g
摘要:The coexistence of ferroelectricity and magnetism in two-dimensional (2D) multiferroic materials with the thickness of few atomic layers offers a tantalizing potential for high-density multistate data storage but has been rarely verified in experiments. Herein, we propose a realistic 2D multiferroic material, VOCl2 monolayer, which is mechanically strippable from the bulk material. It has a large intrinsic in-plane spontaneous electric polarization of 312 pC m(-1) and stable antiferromagnetism with the Neel temperature of 177 K. The off-center displacement of V ions that contributes to the ferroelectricity can be ascribed to the pseudo Jahn-Teller distortion. The energy barrier (0.18 eV) between two ferroelectric states with opposite electronic polarization renders the thermodynamic stability of the ferroelectricity and the switchability of the electric polarizations. The interplay between electric polarization and magnetism would lead to tunable ferroelectricity. Our findings are expected to offer a realistic platform for the study of 2D multiferroic materials as well as their applications in miniaturized memory devices.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85060124020&doi=10.1039%2fc8nr08270g&partnerID=40&md5=9aa435fd20f5e3f7c00a3f0f9be4583a
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