标题:Exploring Anisotropy on Oriented Wafers of MAPbBr(3) Crystals Grown by Controlled Antisolvent Diffusion
作者:Zhang, Leilei; Liu, Yang; Ye, Xin; Han, Quanxiang; Ge, Chao; Cui, Shuangyue; Guo, Qing; Zheng, Xiaoxin; Zhai, Zhongjun; Tao, Xutang
作者机构:[Zhang, Leilei; Liu, Yang; Ye, Xin; Han, Quanxiang; Ge, Chao; Cui, Shuangyue; Guo, Qing; Zheng, Xiaoxin; Zhai, Zhongjun; Tao, Xutang] Shandong Univ, S 更多
通讯作者:Liu, Y;Tao, XT;Liu, Yang
通讯作者地址:[Liu, Y; Tao, XT]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.
来源:CRYSTAL GROWTH & DESIGN
出版年:2018
卷:18
期:11
页码:6652-6660
DOI:10.1021/acs.cgd.8b00896
摘要:The emergence of organic-inorganic halide perovskites has reformed the research status of optoelectronics to a great extent. The bulk single crystals of halide perovskite, which in theory reflect the intrinsic physical properties of the material, are however hard to integrate into functional devices. Just as in the case that silicon wafers have revolutionized modern industries including electronics and solar cells, the availability of perovskite crystal wafers may pave the way to functional devices. Here we designed a new settled temperature and controlled antisolvent diffusion system to precisely control all key factors that affect the supersaturation metastable zone during the crystal growth process, to grow MAPbBr(3) single crystals more than 50 mm in size. Second, we fabricated MAPbBr(3) single crystal wafers with different orientations, specifically, the (100), (010), (001), (110), and (111) wafers, with high crystalline quality (half-peak width of rocking curve of 60-100 arc sec). Some key parameters were measured and compared on the wafers, where the results hint that anisotropy of carrier transport may exist for this pseudocubic structure. We hope the availability of oriented single-crystal wafers can provide more scientists the materials and devices to clarify the debatable physicochemical properties and to integrate the wafers as active layers or substrates in optoelectronic devices.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85056237432&doi=10.1021%2facs.cgd.8b00896&partnerID=40&md5=7b73e0ef9f9f697152e6c9de89168f56
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