标题：Ambipolar SnOxthin-film transistors achieved at high sputtering power
作者：Li, Yunpeng ;Yang, Jia ;Qu, Yunxiu ;Zhang, Jiawei ;Zhou, Li ;Yang, Zaixing ;Lin, Zhaojun ;Wang, Qingpu ;Song, Aimin ;Xin, Qian
作者机构：[Li, Yunpeng ;Yang, Jia ;Qu, Yunxiu ;Zhou, Li ;Yang, Zaixing ;Lin, Zhaojun ;Wang, Qingpu ;Song, Aimin ;Xin, Qian ] Center of Nanoelectronics, State Ke 更多
来源：Applied Physics Letters
摘要：SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOxTFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 °C in ambient air. X-ray-diffraction patterns showed polycrystallisation of SnO and Sn in the annealed SnOxfilms. Scanning-electron-microscopy images revealed that microgrooves appeared after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggest that they were most likely Sn clusters. Atomic force microscopy images indicate an abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has generally been thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to enhance the stoichiometric balance.
© 2018 Author(s).