标题:High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001) surface
作者:Zhang, Fusheng; Chen, Xiufang; Zuo, Zhiyuan; Qin, Xiao; Xu, Xiangang; Zhao, Xian
作者机构:[Zhang, Fusheng; Chen, Xiufang; Zuo, Zhiyuan; Qin, Xiao; Xu, Xiangang; Zhao, Xian] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, P 更多
通讯作者:Chen, Xiufang
通讯作者地址:[Chen, XF; Zuo, ZY]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China;[Zuo, ZY]Shandong Univ, Adv Res Ctr Opt, Jinan 25 更多
来源:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版年:2018
卷:29
期:6
页码:5180-5185
DOI:10.1007/s10854-017-8483-0
摘要:Graphene has attracted intensive attentions due to its significant optoelectronic performances. Photovoltaic effect and photo-thermoelectric effect make graphene to be a hot choice in ultra-wide spectrum band photodetection. Thinking of serious influences such as chemical pollution and mechanical damages of CVD grown and exfoliated graphene caused by transfer and exfoliation processes, the epitaxial graphene on SiC single crystal wafer shows intrinsic and better performances. Here, high quality epitaxial graphene has been successfully synthesized by thermal decomposition of Si-terminated, semi-insulating on-axis oriented 4H-SiC (0001) wafer. Photon response of the graphene has been investigated by employing a metal-graphene-metal photodetector. The largest photo-current value obtained under 780 nm laser illumination and 10 V bias voltage is up to 2.2 x 10(-7) A, which is almost 30 times greater than the dark current. While under 0.05 mW/cm(2) irradiance, the highest values of responsivity and EQE are 4.48 x 10(-2) A/W and 8.13%, respectively. This type of fabricated graphene based photodetector has shown steady and outstanding photo detection performances.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85040785872&doi=10.1007%2fs10854-017-8483-0&partnerID=40&md5=39c9826f8c41d8c8c558ea4c43926fe2
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