标题:InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
作者:Han, Jisheng; Dimitrjiev, Sima; Wang, Li; Iacopi, Alan; Qu, Shuang; Xu, Xiangang
通讯作者:Han, J
作者机构:[Han, Jisheng; Dimitrjiev, Sima; Wang, Li; Iacopi, Alan] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan Campus, Brisbane, Qld 4111, Austral 更多
会议名称:8th European Conference on Silicon Carbide and Related Materials
会议日期:AUG 29-SEP 02, 2010
来源:SILICON CARBIDE AND RELATED MATERIALS 2010
出版年:2011
卷:679-680
页码:801-803
DOI:10.4028/www.scientific.net/MSF.679-680.801
关键词:Gallium Nitrides; Silicon Carbide; LEDs; Quantum Well
摘要:Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.
收录类别:CPCI-S;EI;SCOPUS
Scopus被引频次:2
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-79955117108&doi=10.4028%2fwww.scientific.net%2fMSF.679-680.801&partnerID=40&md5=2b5b52c1b13745aeadf19ce0aabf5ddd
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