标题:Electric field modulated ferromagnetism in ZnO films deposited at room temperature
作者:Bu, Jianpei; Liu, Xinran; Hao, Yanming; Zhou, Guangjun; Cheng, Bin; Huang, Wei; Xie, Jihao; Zhang, Heng; Qin, Hongwei; Hu, Jifan
作者机构:[Bu, Jianpei; Liu, Xinran; Zhou, Guangjun; Cheng, Bin; Huang, Wei; Xie, Jihao; Zhang, Heng; Qin, Hongwei; Hu, Jifan] Shandong Univ, Sch Phys, State Ke 更多
通讯作者:Hu, Jifan
通讯作者地址:[Hu, JF]Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.
来源:APPLIED PHYSICS LETTERS
出版年:2018
卷:112
期:16
DOI:10.1063/1.5022597
摘要:The ZnO film deposited at room temperature, which is composed of the amorphous-phase background plus a few nanograins or nanoclusters (about 1-2 nm), exhibits room temperature ferromagnetism (FM). Such FM is found to be connected with oxygen vacancies. For the Ta/ZnO/Pt device based on the medium layer ZnO deposited at room temperature, the saturation magnetization not only is modulated between high and low resistive states by electric voltage with DC loop electric current but also increases/decreases through adjusting the magnitudes of positive/negative DC sweeping voltage. Meanwhile, the voltage-controlled conductance quantization is observed in Ta/ZnO/Pt, accompanying the voltage-controlled magnetization. However, the saturation magnetization of the Ta/ZnO/Pt device becomes smaller under positive electric voltage and returns in some extent under negative electric voltage, when the DC loop electric current is not applied. Published by AIP Publishing.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85045761146&doi=10.1063%2f1.5022597&partnerID=40&md5=d3487371f874b77c97446a0be5589dc6
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