标题:Magnetization-direction-dependent inverse spin Hall effect observed in IrMn/NiFe/Cu/YIG multilayer structure
作者:Hao, Runrun; Zang, Ruxue; Zhou, Tie; Kang, Shishou; Yan, Shishen; Liu, Guolei; Han, Guangbing; Yu, Shuyun; Mei, Liangmo
作者机构:[Kang, Shishou] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.; Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, 更多
通讯作者:Kang, SS;Kang, Shishou
通讯作者地址:[Kang, SS]Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.
来源:CHINESE PHYSICS B
出版年:2019
卷:28
期:3
DOI:10.1088/1674-1056/28/3/037202
关键词:spin current; magnetic insulator; inverse Hall effect
摘要:The magnetization-direction-dependent inverse spin Hall effect (ISHE) has been observed in NiFe film during spin Seebeck measurement in IrMn/NiFe/Cu/yttrium iron garnet (YIG) multilayer structure, where the YIG and NiFe layers act as the spin injector and spin current detector, respectively. By using the NiFe/IrMn exchange bias structure, the magnetization direction of YIG (M-YIG) can be rotated with respect to that of NiFe (M-NiFe) with a small magnetic field, thus allowing us to observe the magnetization-direction-dependent inverse spin Hall effect voltage in NiFe layer. Compared with the situation that polarization direction of spin current (sigma(s)) is perpendicular to M-NiFe, the spin Seebeck voltage is about 30% larger than that when sigma(s) and M-NiFe are parallel to each other. This phenomenon may originate from either or both of stronger interface or bulk scattering to spin current when sigma(s) and M-NiFe are perpendicular to each other. Our work provides a way to control the voltage induced by ISHE in ferromagnets.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85063450578&doi=10.1088%2f1674-1056%2f28%2f3%2f037202&partnerID=40&md5=52e3bde6a96533b5a259236e8b682b2e
TOP