标题:Recent advances in Sb-based III-V nanowires
作者:Gao, Zhaofeng; Sun, Jiamin; Han, Mingming; Yin, Yanxue; Gu, Yu; Yang, Zai-xing; Zeng, Haibo
作者机构:[Gao, Zhaofeng; Sun, Jiamin; Yang, Zai-xing] Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China.; [Gao, Zhaofeng; Sun, Jiamin; Han, 更多
通讯作者:Yang, ZX;Yang, ZX;Gu, Y;Gu, Yu
通讯作者地址:[Yang, ZX]Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China;[Yang, ZX]Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples 更多
来源:NANOTECHNOLOGY
出版年:2019
卷:30
期:21
DOI:10.1088/1361-6528/ab03ee
关键词:Sb-based III-V NWs; controllable growth; field-effect-transistors;; tunnel diode; low-power inverter; photodetectors; Majorana fermions
摘要:Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85063263078&doi=10.1088%2f1361-6528%2fab03ee&partnerID=40&md5=8446d1f8cb5bd25151488a0713452f92
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