标题:Annealing characters of KTP crystal formed with He+-ions at high dose and low energy
作者:Yin, Jiao-Jian ;Lu, Fei ;Qin, Zhen-Hua ;Ming, Xian-Bing ;Ma, Yu-Jie ;Jia, Chuan-Lei
通讯作者:Lu, F
作者机构:[Yin, Jiao-Jian ;Lu, Fei ;Qin, Zhen-Hua ;Ming, Xian-Bing ;Ma, Yu-Jie ] Shandong Provincial Key Laboratory of Laser Technology and Application, School 更多
来源:2011 Symposium on Photonics and Optoelectronics, SOPO 2011
出版年:2011
DOI:10.1109/SOPO.2011.5780635
摘要:A dose of 8×1016ions/cm2He+ions has been implanted into a z-cut KTP crystal with energy of 150 KeV at room temperature. The refractive index profile has been measured by the Model 2010 Prism Coupler at room temperature and after annealed at temperature of 200°C, 300°C and 400°C. The surface effective refractive index also has been obtained. The results show that the surface effective refractive index increases with annealing temperature, indicating a process of lattice structure recovery. After annealing at 400°C for 3.5 hours, the surface effective refractive index nx, nyis nearly to, while nzis still much less than the refractive index of substrate KTP crystal. © 2011 IEEE.
收录类别:EI
资源类型:会议论文
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