标题:Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers
作者:Zhao, Chongchong; Yang, Xiaokun; Shen, Luyang; Luan, Caina; Liu, Jianqiang; Ma, Jin; Xiao, Hongdi
作者机构:[Zhao, Chongchong; Yang, Xiaokun; Shen, Luyang; Luan, Caina; Ma, Jin; Xiao, Hongdi] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R C 更多
通讯作者:Xiao, Hongdi;Xiao, HD
通讯作者地址:[Xiao, HD]Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China.
来源:JOURNAL OF ALLOYS AND COMPOUNDS
出版年:2019
卷:789
页码:658-663
DOI:10.1016/j.jallcom.2019.03.036
关键词:Nanoporous GaN; Distributable Bragg reflector; Multiple quantum well;; Electrochemical etching
摘要:High photoluminescence (PL) efficiency InGaN/GaN multiple quantum well (MQW) active layers have been fabricated by metalorganic chemical vapor deposition (MOCVD) and followed by electrochemical (EC) etching. The MQW active layers were embedded nanoporous GaN (NP-GaN) distributed Bragg reflectors (DBRs). The PL intensity of MQW structure on the NP GaN mirror was several times higher than for as-grown sample, which should be attributable to improved light extraction efficiency (LEE) due to the increased light-extracting surface area and buried DBR mirror, and improved internal quantum efficiency (IQE) due to the relaxation of strain in the MQWs embedded in the NP-GaN DBRs. (C) 2019 Elsevier B.V. All rights reserved.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062634531&doi=10.1016%2fj.jallcom.2019.03.036&partnerID=40&md5=9d82ffde665f59c976f7bc4a65e01888
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