标题:Scaling behaviour of state-to-state coupling during hole trapping at Si/SiO2
作者:Ma, Xiaolei; Jiang, Xiangwei; Chen, Jiezhi; Wang, Liwei; En, Yunfei
通讯作者:Chen, JZ
作者机构:[Ma, Xiaolei; Jiang, Xiangwei] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.; [Chen, 更多
会议名称:IEEE International Reliability Physics Symposium (IRPS)
会议日期:MAR 31-APR 04, 2019
来源:2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
出版年:2019
卷:2019-March
DOI:10.1109/IRPS.2019.8720537
关键词:Charge trapping; Vacancy defect level; Coupling constant; Scaling; behavior
摘要:The decay length scaling behavior of state-to-state coupling between silicon valence band (VBMSi) and oxygen vacancy defect (E-defect) in Si/SiO2 interface is thoroughly investigated by density-functional theory. The detailed coupling process is revealed, and the scaling rate with interface-defect distance is obtained. Results show that the coupling constants (Vc) decay with the defect distance is not so fast as the WKB approximation predicts, and the reason lies in the fact that the tunneling picture overestimates the localization of the defect states.
收录类别:CPCI-S;EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85066731851&doi=10.1109%2fIRPS.2019.8720537&partnerID=40&md5=6a8bdd1ba4e6b5f9e5b6536e66ac467e
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