标题:Structural and electrical properties of PbTiO3 thin films on conductive oxide LaNiO3 coated Si substrates prepared by sol-gel method
作者:Li, AD; Wu, D; Ge, CZ; Wang, H; Wang, M; Wang, M; Liu, ZG; Ming, NB
通讯作者:Li, Aidong
作者机构:[Li, AD; Wu, D; Ge, CZ; Wang, H; Wang, M; Wang, M; Liu, ZG; Ming, NB]Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peo 更多
会议名称:International-Union-of-Materials-Research-Societies International Conference on Advanced Materials (IUMRS-ICAM 99)
会议日期:JUN 13-18, 1999
来源:THIN SOLID FILMS
出版年:2000
卷:375
期:1-2
页码:220-223
DOI:10.1016/S0040-6090(00)01248-7
关键词:deposition process; electrical properties and measurements; LaNiO3 film;; PbTiO3 film
摘要:Conductive LaNiO3 (LNO) thin films were grown on Si substrates by metalorganic decomposition (MOD) and their application as the bottom electrodes for the growth of sol-gel derived PbTiO3 (PT) thin films. The structure, morphology and electrical properties of the multilayer films were characterized by some analytical techniques and electrical measurements. PT film on LNO/Si had pure perovskite phase with sharp cross-section and small surface roughness. Most Raman modes of PT films shifted to the low frequency due to the pressure effect in the films. PT capacitor showed saturated hysteresis loop, higher resistivity and breakdown voltage. These results indicated the PT/LNO/Si heterostructure fabricated by sol-gel and MOD techniques to be a promising combination for microelectronic device. (C) 2000 Elsevier Science S.A. All rights reserved.
收录类别:CPCI-S;EI;SCOPUS;SCIE
WOS核心被引频次:18
Scopus被引频次:18
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-0342538861&doi=10.1016%2fS0040-6090%2800%2901248-7&partnerID=40&md5=dd0d920ca1c9ebc70a6596ff69905c47
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