标题:High performance InGaZnO-based Schottky diodes fabricated at room temperature
作者:Yan, Linlong; Xin, Qian; Du, Lulu; Zhang, Jiawei; Luo, Yi; Wang, Qingpu; Song, Aimin
通讯作者:Xin, Qian
作者机构:[Yan, Linlong; Xin, Qian; Du, Lulu; Luo, Yi; Wang, Qingpu; Song, Aimin] Shandong Univ, Sch Phys, 27 Shanda Nanlu, Jinan 250100, Peoples R China.; [Z 更多
会议名称:17th International Conference on II-VI Compounds and Related Materials (II-VI)
会议日期:SEP 13-18, 2015
来源:PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9
出版年:2016
卷:13
期:7-9
页码:618-622
DOI:10.1002/pssc.201510291
关键词:indium gallium zinc oxide (InGaZnO or IGZO); Schottky diodes;; radio-frequency magnetron sputtering
摘要:Recently, Indium gallium zinc oxide (InGaZnO or IGZO) has attracted much attention for flexible and transparent electronics, because of its superior electric properties, optical transparency and low processing temperature. In this work, Schottky diodes with a structure of Pd/IGZO/Ti/Au were fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment. The optimised diode with a 66-nm-IGZO layer shows an extremely large barrier height (1.02 eV), a very high rectification ratio (> 8.5 x 10(7)), and a close to unit ideality factor (1.23). Our results suggest that Pd and IGZO can form very high quality Schottky contact with a large barrier height, extremely low defects density and high uniformity. (C) 2016 WILEY-VCH Verlag GmbH & Co.
收录类别:CPCI-S;EI;SCOPUS
WOS核心被引频次:3
Scopus被引频次:3
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84973293698&doi=10.1002%2fpssc.201510291&partnerID=40&md5=b13c24ed2286db22a8613794e0f4ae1c
TOP