标题：Performance Enhancement of Graphene Photodetectors via In Situ Preparation of TiO2 on Graphene Channels
作者：Cheng, Chuantong; Yang, Hongru; Huang, Beiju; Zhang, Huan; Fan, Hui; Zhang, Xingfei; Mao, Xurui; Gui, Qiang; Yang, Xiaowei; Pei, Wei 更多 作者机构：[Cheng, Chuantong; Yang, Hongru; Huang, Beiju; Zhang, Huan; Fan, Hui; Zhang, Xingfei; Mao, Xurui; Gui, Qiang; Yang, Xiaowei; Pei, Weihua; Chen, Hongda 更多
通讯作者：Huang, BJ;Huang, BJ
通讯作者地址：[Huang, BJ]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China;[Huang, BJ]Univ Chinese Acad Sci, Coll 更多
来源：ADVANCED MATERIALS TECHNOLOGIES
关键词：broadband; graphene photodetectors; high stability; titanium dioxide
摘要：Graphene has been considered a promising material for high-performance photodetectors due to its broad light-absorption bandwidth and fast photoresponse time. However, weak light absorption (2.3%) in monolayer graphene results in the relatively low photoresponsivity of graphene photodetectors (GPDs). Moreover, the operation stability of GPDs has become another commercialization bottleneck due to the environmental sensitivity of graphene materials. Hence, developing a compact GPD with high photoresponsivity and high stability is critical and significant. Here, an in situ, thermally oxidized TiO2 layer is used to enhance both the photoresponsivity and stability of a metal-graphene-metal photodetector. Moreover, the fabricated GPDs operate well under zero bias, avoiding the large dark current produced in traditional GPDs. These results address key challenges for high-performance photodetectors and are promising for the development of complementary metal-oxide-semiconductor compatible graphene-based optoelectronic applications, such as monolithic optoelectronic-integrated broadband image sensor chips.