标题：Removal mechanism and surface quality of crystal semiconductor materials in scratching tests with Berkovich indenter
作者：Zhang, Cheng; Zhu, Hongtao; Jiang, Zhaoliang; Huang, Chuanzhen; Wang, Jun
作者机构：[Zhang, Cheng; Zhu, Hongtao; Jiang, Zhaoliang; Huang, Chuanzhen] Shandong Univ, Sch Mech Engn, Natl Demonstrat Ctr Expt Mech Engn Educ,Minist Ed, Ctr 更多
通讯作者：Zhu, Hongtao;Zhu, HT;Jiang, ZL
通讯作者地址：[Zhu, HT; Jiang, ZL]Shandong Univ, Sch Mech Engn, Natl Demonstrat Ctr Expt Mech Engn Educ,Minist Ed, Ctr Adv Jet Engn Technol CaJET,Key Lab High Effic 更多
来源：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
关键词：Removal mechanism; Surface quality; Crystal semiconductor materials;; Nanoscratching
摘要：Crystal semiconductor materials have been applied in a wide range of technology applications for their unique physical and mechanical properties. The groove depths of crystal semiconductor materials increased with the increasing scratching load while the effects of scratching speeds on the groove depths were not significant. Unlike the indentation process, the surfaces were sheared by the scratching load, leading to plastic flow and "ridge" at the edge of the scratches in the ranging of 10-40 mN. Cracks were observed at the edge of surface and extended to the free surface when the scratching load reached 60 mN, even resulting in the removal of materials due to brittle fracture. Meanwhile, the critical load of elastic-plastic deformation of single crystal Si and Ge was 2.24 mN and 2.26 mN, respectively. The original Si-I was converted to beta-Si and then to Si-XII (R8) and body-centered cubic (BC8), eventually returned to the Si-XII structure in the scratching process. Micro-chips and fracture debris indicated that brittle fracture and shear fracture occurred in the scratching experiments. In order to obtain relatively good surface quality of crystal semiconductor materials, the scratching load should be controlled below 40 mN and the scratching speed should be about 4 mu m/s.