标题：Multi-watt passively Q-switched Yb:YAB/Cr:YAG microchip lasers
作者：Maria Serres, Josep; Loiko, Pavel; Mateos, Xavier; Liu, Junhai; Zhang, Huaijing; Yumashev, Konstantin; Griebner, Uwe; Petrov, Valentin; 更多 作者机构：[Maria Serres, Josep; Mateos, Xavier; Aguilo, Magdalena; Diaz, Francesc] Univ Rovira & Virgili, Fis & Cristal Lografia Mat & Nanomat FiCMA FiCNA, Camp 更多
会议名称：Conference on Solid State Lasers XXVI - Technology and Devices
会议日期：JAN 30-FEB 02, 2017
来源：SOLID STATE LASERS XXVI: TECHNOLOGY AND DEVICES
关键词：borate crystals; ytterbium; diode-pumped lasers; saturable absorber;; passive Q-switching
摘要：A trigonal 5.6 at.% Yb: YAl3(BO3)(4) (Yb: YAB) crystal is employed in continuous-wave (CW) and passively Q-switched microchip lasers pumped by a diode at 978 nm. Using a 3 mm-thick, c-cut Yb: YAB crystal, which has a higher pump absorption efficiency, efficient CW microchip laser operation is demonstrated. This laser generated a maximum output power of 7.18 W at 1041-1044 nm with a slope efficiency eta of 67% (with respect to the absorbed pump power) and an almost diffraction-limited beam, M-x, y(2) < 1.1. Inserting a Cr: YAG saturable absorber, stable passive Q-switching of the Yb: YAB microchip laser was obtained. The maximum average output power from the Yb: YAB/Cr: YAG laser reached 2.82 W at 1042 nm with eta = 53% and a conversion efficiency with respect to the CW mode of 65% (when using a 0.7 mm-thick Cr: YAG). The latter corresponded to a pulse duration and energy of 7.1 ns/47 mu J at a pulse repetition rate (PRR) of 60 kHz. Using a 1.3 mm-thick Cr: YAG, 2.02 W were achieved at 1041 nm corresponding to. = 38%. The pulse characteristics were 4.9 ns/83 mu J at PRR = 24.3 kHz and the maximum peak power reached 17 kW. Yb: YAB crystals are very promising for compact sub-ns power-scalable microchip lasers.