标题:A New Layout Method to Improve the Thermal Stability of Multi-finger Power HBT
作者:Chen, Y.; Shen, H.; Liu, X.
通讯作者:Chen, Y
作者机构:[Chen, Y.] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China.; [Shen, H.; Liu, X.] Chinese Acad Sci, Inst Microelect, Beijing 10 更多
会议名称:IEEE 8th International Conference on ASIC
会议日期:OCT 20-23, 2009
来源:2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS
出版年:2009
页码:344-+
关键词:Heterojunction Bipolar Transistor, Power; Thermal stability
摘要:A new layout method to improve the thermal stability of Multi-finger Power heterojunction bipolar transistors(HBT) is presented in this paper. In the new layout the through-wafer-via is inserted into the central of the Multi-finger Power HBT and the emitter fingers were connected by a wide metal layer that was exactly on the active thermal emitter area. According to the experimental results of a 8 fingers GaAs power HBT, the new layout method with compare to the routine layout method can reduce the thermal resistance from 242 degrees C/W to 163 degrees C/W and expand the thermal stability power density from 0.76 mW/mu m(2) to 1.14 mW/mu m(2). And also the radio frequency( RF) gain loss of the power HBT due to the thermal effect was suppressed with the improvement of the thermal stability.(1)
收录类别:CPCI-S
WOS核心被引频次:1
资源类型:会议论文
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