标题：A New Layout Method to Improve the Thermal Stability of Multi-finger Power HBT
作者：Chen, Y.; Shen, H.; Liu, X.
作者机构：[Chen, Y.] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China.; [Shen, H.; Liu, X.] Chinese Acad Sci, Inst Microelect, Beijing 10 更多
会议名称：IEEE 8th International Conference on ASIC
会议日期：OCT 20-23, 2009
来源：2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS
关键词：Heterojunction Bipolar Transistor, Power; Thermal stability
摘要：A new layout method to improve the thermal stability of Multi-finger Power heterojunction bipolar transistors(HBT) is presented in this paper. In the new layout the through-wafer-via is inserted into the central of the Multi-finger Power HBT and the emitter fingers were connected by a wide metal layer that was exactly on the active thermal emitter area. According to the experimental results of a 8 fingers GaAs power HBT, the new layout method with compare to the routine layout method can reduce the thermal resistance from 242 degrees C/W to 163 degrees C/W and expand the thermal stability power density from 0.76 mW/mu m(2) to 1.14 mW/mu m(2). And also the radio frequency( RF) gain loss of the power HBT due to the thermal effect was suppressed with the improvement of the thermal stability.(1)