标题:PREPARATION AND PROPERTIES OF BI4TI3O12 SINGLE-CRYSTAL THIN-FILMS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
作者:WANG, H; FU, LW; SHANG, SX
作者机构:[WANG, H]SHANDONG UNIV,INST CRYSTAL,JINAN 250100,PEOPLES R CHINA.;[ FU, LW] SHANDONG UNIV,DEPT OPT,JINAN 250100,PEOPLES R CHINA.;[ SHANG, SX] 更多
通讯作者:WANG, H
通讯作者地址:[WANG, H]CCAST,WORLD LAB,POB 8730,BEIJING 100080,PEOPLES R CHINA.
来源:JOURNAL OF APPLIED PHYSICS
出版年:1993
卷:73
期:11
页码:7963-7965
DOI:10.1063/1.353929
摘要:Bismuth titanate (Bi4Ti3O12) thin films have been grown on (100) silicon substrates at 550-degrees-C by atmospheric Pressure metalorganic chemical vapor deposition using Bi (C6H5)3 and Ti (OC4H9)4 as the source materials. The x-ray diffraction analysis and reflection electron diffraction pattern revealed that the film is a single crystal with a (100) orientation. Ferroelectric properties were confirmed by polarization hysteresis curve observation. The remanent polarization and coercive field were found to be 38 muC/CM2 and 45 kV/cm, respectively. The measured dielectric constant and loss tangent were 93 and 0.05, respectively, at room temperature.
收录类别:SCOPUS;SCIE
WOS核心被引频次:34
Scopus被引频次:30
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-0012609036&doi=10.1063%2f1.353929&partnerID=40&md5=3fd093b288f5f4ccd05df27f1988e96f
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