标题:New localized electronic states of soliton in trans-(CH)X
作者:Rouli F.; Shijie X.; Changqin W.; Xin S.
作者机构:[Rouli, F] Shanghai Institute of Technical Physics, China;[ Shijie, X] Department of Physics, Shandong University, Jinan, China;[ Changqin, W] Physics 更多
来源:Chinese Physics Letters
出版年:1987
卷:4
期:8
页码:349-352
DOI:10.1088/0256-307X/4/8/004
摘要:It is well known that the soliton in trans-(CH)X possesses a localized electronic state at the center of the gap. Besides this mid-gap state, we have found that, there exist another four localized electronic states around the soliton. They form four discrete levels outside the conduction and valence bands: one sits near the bottom edge of the conduction band and one near the top edge of the conduction band; another two are located symmetrically near the valence band. © 1987 IOP Publishing Ltd.
收录类别:SCOPUS;SCOPUS
最新影响因子:0.8
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84956084244&doi=10.1088%2f0256-307X%2f4%2f8%2f004&partnerID=40&md5=7db6bd7f8b36faa522882fe5d7033ae6
TOP