标题：New localized electronic states of soliton in trans-(CH)X
作者：Rouli F.; Shijie X.; Changqin W.; Xin S.
作者机构：[Rouli, F] Shanghai Institute of Technical Physics, China;[ Shijie, X] Department of Physics, Shandong University, Jinan, China;[ Changqin, W] Physics 更多
来源：Chinese Physics Letters
摘要：It is well known that the soliton in trans-(CH)X possesses a localized electronic state at the center of the gap. Besides this mid-gap state, we have found that, there exist another four localized electronic states around the soliton. They form four discrete levels outside the conduction and valence bands: one sits near the bottom edge of the conduction band and one near the top edge of the conduction band; another two are located symmetrically near the valence band. © 1987 IOP Publishing Ltd.